Semiconductor device
US6040610A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | Mar 21, 2000 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a chip including a MISFET having a source and a drain, in which one of the source and the drain is connected to a second current supply node, an impedance element having a first terminal connected to the other of the source and the drain and a second terminal connected to a first current supply node, and a switching element, in which a well or a body electrode of the MISFET has an active state and a standby state, and is connected to a bias voltage generator for generating different voltages through the switching element, the threshold voltage V.sub.ths during standby state of the MISFET is higher than the threshold voltage V.sub.tha during active state of the MISFET, a voltage applied to a gate of the MISFET being able to take two stationary values, and the following relationship is satisfied V.sub.DD (1-V.sub.ths /V.sub.DD)<V.sub.ths -V.sub.tha, where V.sub.DD represents the higher voltage among the two stationary values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.