Inductively coupled plasma powder vaporization for fabricating integrated circuits
US6041735A · kind A · utility
63Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1998 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Mar 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for performing material deposition on semiconductor devices. The apparatus provides an enclosure for defining a chamber. The chamber includes a metallic portion such as a conductor coil powered by a voltage generator. A gas, having a suspension of particles for treating the semiconductor devices, is introduced into the chamber and the powered conductor coil converts the gas to inductively coupled plasma and vaporizes the particles. The particles can then be deposited on the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.