Pattern film repair using a focused particle beam system
US6042738A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Apr 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides methods for employing a focused particle beam system in the removal of an excess portion from a workpiece having an opaque film patterned on a substrate and more particularly provides methods of gas-assisted etching using an etching gas including bromine. One aspect of the invention provides a method including the steps of (i) mounting the workpiece on a movable stage capable of movement in the X and Y directions, (ii) scanning a selected surface area of a workpiece, having an opaque film patterned on a substrate, with a focused particle beam, (iii) detecting intensities of particles emitted from the workpiece as a result of the workpiece scanning step, (iv) determining a shape of the patterned film based on the detected particle intensities, (v) determining an excess portion of the patterned film based on the shape of the patterned film, (vi) etching the excess portion with the focused particle beam, and (vii) introducing an etching gas, concurrent with the etching step, in selected proximity to the excess portion. The etching gas includes bromine or a bromine-containing material. The etching gas can further include water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.