Fabrication method of a polarization selective semiconductor laser
US6043104A · kind A · utility
58Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5036
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabrication method of a semiconductor laser capable of controlling a polarization mode of output light is disclosed. In the fabrication method, after two laser portions are independently formed, the laser portions are positioned to be optically coupled to each other. In another fabrication method of the laser, after at least portions of two laser portions are separately formed, an irregularly-formed portion at a boundary portion therebetween is removed. The fabrication method can be facilitated and a degree of freedom in the polarization control can be increased, since the two laser portions are separately formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.