Ohmic contact and method of manufacture
US6043143A · kind A · utility
1Cited by
0References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 4, 1998 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of improving contact resistance in a multi-layer heterostructure comprising the steps of providing a substrate, growing a crystalline material on the substrate, and doping close to an interface of the substrate and the crystalline material with n-silicon to provide continuity at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.