Method for forming low dielectric constant insulating film
US6043167A · kind A · utility
68Cited by
10References
12Claims
0Family size
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Key dates
| Filing date | Oct 10, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Oct 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.