Patent · US Expired

Photodetector involving a MOSFET having a floating gate

US6043508A · kind A · utility

4Cited by

2References

12Claims

0Family size

Assignee

Rados Technology Oy · FI

Inventors

Timo Oikari · Turku, FI
Jukka Kahilainen · Discovery Bay, US
Jukka Haaslahti · Turku, FI

Key dates

Filing date	May 5, 1998
Grant date	Mar 28, 2000
Priority date	—
Expiry date	May 5, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH10F30/282
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A photodetector comprising a photoemissive surface capable of liberating photoelectrons. Photoelectrons are detected by a MOSFET having a floating gate, which is suitably charged before measurement in such a way that photoelectrons can cause a change in charge of the floating gate. The detected change indicates the amount of light received by the detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.