Optical semiconductor device
US6043515A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Sep 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.