Power amplifier incorporating heterojunction and silicon bipolar transistors
US6043714A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1998 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Mar 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/513
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier including an amplifier stage including a heterojunction bipolar transistor for signal amplification having a base electrode connected to an RF signal input terminal, and a grounded emitter electrode; and a bias circuit including a silicon bipolar transistor having a base electrode connected to a power supply terminal, and a terminal from which a current amplified in response to a base current is output, which terminal is connected to the base electrode of the heterojunction bipolar transistor stage. In this power amplifier, since the voltage required for operating the bias circuit is reduced, a power amplifier capable of operating at a low voltage is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.