Semiconductor laser device

US6044101A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Johann Luft · Wolfsegg, DE

Key dates

• Filing date: Mar 2, 1998
• Grant date: Mar 28, 2000
• Expiry date: Mar 2, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/4031
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser device having a multiplicity of individual lasers disposed in a laser-active region within outer boundary surfaces having front and rear boundary surfaces extending crosswise to an exit direction of the laser light, and lateral, bottom and top boundary surfaces extending parallel to the exit direction of the laser light, includes an absorption layer for decoupling photons interfering with desired laser operation, the absorption layer being applied full-surface to all of the outer boundary surfaces of the laser device, except for the laser-active region for at least one of the front and the rear boundary surfaces, respectively, extending crosswise to the exit direction of the laser light, and except for a relatively few locations remaining free for disposing terminal electrodes thereon or for introducing pump light thereat.