Abrasive material for polishing a semiconductor wafer, and methods for manufacturing and using the abrasive material
US6045605A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 1998 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | May 14, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.