Substrate structures for electronic devices
US6045626A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0632
Abstract
A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.