Photoconductor for electrophotography
US6045958A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1999 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Feb 1, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08207
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first selenium-arsenic layer of a photoconductor, deposited on a conductive substrate, has a thickness and arsenic concentration effective to preserve an electrically charged surface potential in darkness and to transport carriers generated on exposure to light. The first layer is between 20 to 70 .mu.m thick. A second amorphous selenium-arsenic alloy layer, formed on the first layer, generates carriers on exposure to light. The surface roughness, Rmax., of the conductive substrate is less than or equal to 0.5 .mu.m. The first layer, or both of the photoconductive layers, are doped with iodine. When both layers contain iodine, the iodine content of the second layer is equal to or less than that of the first layer. The thickness of the second layer is between 5 to 30 .mu.m. The arsenic content of the amorphous selenium-arsenic alloy of the second layer is equal to or greater than that in the first layer. After deposition of the first and second layers, the photoconductor is heat treated at between 100.degree. to 200.degree. for 30 to 80 minutes. In a further embodiment the first layer of the photoconductor has an arsenic content in the range of 10 to 45 wt %. The second layer arse…
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