Method of forming stack capacitor with improved plug conductivity

US6046059A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hua Shen · Beacon, US
• Joachim Hoepfner · Planegg, DE

Key dates

• Filing date: May 8, 1998
• Grant date: Apr 4, 2000
• Expiry date: May 8, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

The present invention includes a method of improving conductivity between an electrode and a plug in a stacked capacitor where an oxide has formed therebetween. The method includes the steps of bombarding the oxide with ions and mixing the oxide with materials of the electrode and the plug to increase a conductivity between the electrode and the plug. A method of forming a diffusion barrier within an electrode in a stacked capacitor includes the steps of providing a stacked capacitor having a plug coupled to an electrode and bombarding the electrode with ions to form the diffusion barrier within the electrode such that the diffusion barrier is electrically conductive. A stacked capacitor in accordance with the present invention includes an electrode, a plug for electrically accessing a storage node, the plug being coupled to the electrode and a barrier layer disposed within the electrode for preventing diffusion of materials which reduce conductivity between the electrode and the plug.