Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process
US6046065A · kind A · utility
54Cited by
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22Claims
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Key dates
| Filing date | Sep 12, 1997 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Sep 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.