Process for producing very thin semiconductor chips
US6046073A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01068
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The novel process facilitates the production of very thin semiconductor chips with thicknesses down to a few .mu.m. The semiconductor chip is first of all arranged on contact surfaces, with the active side oriented toward the contact surfaces. The chip is then electrically connected to the contact surfaces via contact studs. Silicon is then removed from the exposed rear side of the semiconductor chip during a plasma etching process which has high selectivity with respect to the other materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.