Photoelectric conversion apparatus having semiconductor structure and refresh feature, and method for driving same
US6046446A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A high S/N ratio, stable, and high read rate photoelectric conversion device is formed by the same process as that for a TFT in a photoelectric conversion apparatus, and includes a photoelectric conversion device having a first electrode layer, a semiconductor layer, and a second electrode layer, first and second switch devices each having first and second main electrodes, first and second power sources, and a reading circuit, where the first electrode layer is electrically connected to the first main electrode, the second electrode layer is electrically connected to a power source, and the second main electrode is electrically connected to the reading circuit. The switch device is turned on in refresh driving for applying an electric field from the power source to the second electrode layer in a direction for guiding carriers from the semiconductor layer to the second electrode layer, thereby fixing a potential on a first electrode layer side of the photoelectric conversion device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.