Semiconductor device having a capacitor dielectric element and wiring layers
US6046490A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1998 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Aug 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with a multilayered interconnection and a capacitor dielectric element, in which the transistor in the device has a non-degraded characteristics and the degradation of the capacitor dielectric element is suppressed. The semiconductor device has wiring layers connecting to one another through contact holes in insulating layers. One of the insulating layers is formed so as to cover at least a part of the area above the transistor and so as not to cover the area above the capacitor dielectric element. Hydrogen generated by heat-treating the insulating layer is supplied to the transistor to recover the damage in it, while hydrogen is suppressed from arriving at the capacitor element so that the capacitor dielectric element does not degrade.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.