Method for growing single crystals from polycrystalline precursors
US6048394A · kind A · utility
12Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1998 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Aug 14, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.