Benign method for etching silicon dioxide
US6048406A · kind A · utility
10Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH.sub.4 F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH.sub.4)HF.sub.2) with water provides a benign alternative for cleaning silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.