Self-biasing, non-magnetic, giant magnetoresistance sensor
US6048632A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A self-biasing, non-magnetic giant magnetoresistive sensor having a Corbino-disk geometry constructed from a thin film of e.g., doped, Mercury Cadmium Telluride (MCT) Hg.sub.1-x Cd.sub.x Te exhibiting anomalously large Giant Magnetresistance (GMR) and zero field offset. In one embodiment, the sensor has a silicon substrate, a layer of doped, inhomogeneous MCT, and electrodes attached to the inhomogeneous layer. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate. In another embodiment, the sensor has a silicon substrate, a layer of doped, homogeneous MCT, and electrodes attached to the doped homogeneous MCT. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate as well. With constructed in as either of these embodiments, highly doped Corbino devices may show a significant zero-field offset in the GMR which results in a built-in bias field as high as 1500 G at T=300 K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.