Method for fabricating a ferroelectric capacitor
US6048737A · kind A · utility
8Cited by
7References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 3, 1996 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
A ferroelectric capacitor taking a multilayer structure wherein a conductive oxide layer which is formed between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current. The multilayer structure can be fabricated by depositing a silicon oxide (SiO.sub.2) layer, an adhesive layer, a bottom metal layer, a lower conductive oxide layer, a ferroelectric layer, an upper conductive oxide layer and a top metal electrode layer are deposited over a silicon substrate, in sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.