Process for manufacture of composite semiconductor devices
US6048751A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1995 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Dec 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.