Two-color infrared detector and fabrication method thereof
US6049116A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1998 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/24
Abstract
A structure and the fabrication method of two-color IR detector are disclosed. Disclosed two-color IR detector structure is a n-p-N structure which can be realized using only two-layer HgCdTe. The most important factor in the two-color IR detector structure is the formation of the potential barrier in the conduction band of p-N heterojunction. This potential barrier prevents photogenerated minority carriers in p-HgCdTe region from diffusing to and being collected by N-HgCdTe region (larger band gap diode). The calculated potential barrier heights under the thermal equilibrium at 77 K are 21 kT (141 meV) and 13.4 kT (89 meV) for the cases of p-Hg.sub.0.78 Cd.sub.0.22 Te/N-Hg.sub.0.69 Cd.sub.0.3l Te and p-Hg.sub.0.69 Cd.sub.0.31 Te/N-Hg.sub.0.636 Cd.sub.0.364 Te with each side carrier concentration of 5.times.10.sup.15 and 1.times.10.sub.16 cm.sup.-3, respectively. It is confirmed that spectral response wavelength range of two diodes is well distinguished and two-color detector shows very low spectral crosstalk.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.