Semiconductor component and method of manufacture

US6051456A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Robert B. Davies · Tempe, US
• Andreas Wild · Weimar, DE

Key dates

• Filing date: Dec 21, 1998
• Grant date: Apr 18, 2000
• Expiry date: Dec 21, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor component includes an asymmetric transistor having two lightly doped drain regions (1300, 1701), a channel region (1702), a source region (1916) located within the channel region (1702), a drain region located outside the channel region (1702), a dielectric structure (1404) located over at least one of the two lightly doped drain regions (1300, 1701), two gate electrodes (1902, 1903) located at opposite sides of the dielectric structure (1404), a drain electrode (1901) overlying the drain region (1915), and a source electrode (1904) overlying the source region (1916). The semiconductor component also includes another transistor having an emitter electrode (122) located between a base electrode (121) and a collector electrode (123) where the base electrode (121) is formed over a dielectric structure (1405).