Semiconductor pressure sensor including reference capacitor on the same substrate
US6051853A · kind A · utility
38Cited by
3References
27Claims
0Family size
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Key dates
| Filing date | Oct 3, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Oct 3, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.