Heterojunction bipolar transistor having improved heat dissipation
US6051871A · kind A · utility
16Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Oct 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor has a mesa including collector 604, base 603, and emitter 602 layers. The mesa has first and second sidewalls 606. An improved heat dissipation structure comprises a layer of electrically insulative and thermally conductive material 607 disposed on one of the sidewalls. A thermal path metal 600 is electrically connected to the emitter 602 and is disposed on the layer of electrically insulative and thermally conductive material 607. The thermal path metal 600 extends from the emitter 602 to the substrate 608 providing for efficient dissipation of heat that is generated by the HBT device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.