Semiconductor device and fabrication method
US6051877A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Jul 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.