Surface emitting semiconductor laser
US6052398A · kind A · utility
54Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Apr 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.