Fabrication of scanning III-V compound light emitters integrated with Si-based actuators
US6054335A · kind A · utility
67Cited by
8References
1Claims
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Key dates
| Filing date | Dec 11, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.