Method of manufacturing semiconductor article
US6054363A · kind A · utility
121Cited by
8References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1997 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.