Semiconductive ceramic and semiconductive ceramic element using the same
US6054403A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Oct 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/043
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.