Semiconductor light emitting device having a protecting device
US6054716A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jan 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in electrical connection between said first conductivity type layer and said second conductivity type layer so that said light emitting portion is protected against at least a reverse voltage applied to said light emitting portion. The light emitting portion and the protecting element portion can be formed by separate chips or in one chip having the both. They are formed into a lamp-type or chip-type light emitting device. The incorporation of the protecting element increase the reverse-voltage resistance for a compound semiconductor, such as galium-itride or the like, that is less resistive to reverse voltages applied. If a zener diode is employed as a protecting element, the protection is also available against high forward voltages. Therefore, it is possible to prevent against damages due to static electricity even during mafacture stages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.