Semiconductor device
US6054730A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 5, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
A semiconductor device comprises a transistor having a gate, a source, and a drain, one of the source and drain being a first end, and the other being a second end, and a capacitor comprising a storage node connected to the first end and a plate electrode, wherein a current flowing between the source and drain when a potential Va is applied to the second end and a potential Vb, which is lower than Va, is applied to the storage node is smaller than a current flowing the source and the drain when a potential Vb is applied to the second end and a potential Va is applied to the storage node, while the potential of the gate and the potential of the plate electrode are maintained to be constant. Here, the transistor should preferably be a MIS-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.