Integrated circuit configuration for driving a power MOSFET with a load on the source side

US6054738A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Rainald Sander · Oberhaching, DE
• Chihao Xu · Riegelsberg, DE

Key dates

• Filing date: Aug 19, 1998
• Grant date: Apr 25, 2000
• Expiry date: Aug 19, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Field-effect-controllable power semiconductor components with a source-connected load are made conducting via a control circuit with an integrated charge pump. When a generator connected to the source side is in operation, then the source potential becomes higher than the drain potential. A parasitic diode therefore carries current in the control circuit. That current turns on a parasitic bipolar transistor that limits the gate potential to a value that is no longer sufficient for making the power semiconductor component conducting. This effect is prevented by connecting a further diode in antiseries with the parasitic diode.