Protection against overvoltages of an integrated MOS power transistor
US6054740A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 27, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | May 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
The present invention relates to a protection device for a component including a vertical MOS power transistor and logic components. The protection device includes a first zener diode, a first terminal of which corresponds to the substrate and a second terminal of which corresponds to a region of the second type of conductivity formed in the substrate. It also includes a second zener diode of the same type of conductivity as the first zener diode but of higher avalanche voltage, the second terminals of both zener diodes being connected to a circuit for starting the power transistor via a logic circuit which only becomes conductive when one of its inputs is high and distinct from the other input.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.