Semiconductor device
US6054752A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device comprises a semiconductor substrate including a first conductivity type first semiconductor layer and a second conductivity type second semiconductor layer formed on the first semiconductor layer. A unit cell for controlling current flowing between a source electrode and a drain electrode is formed in the semiconductor substrate. A trench is formed in a peripheral region of the unit cell to form mesa structure. A field relaxing layer is formed between an insulating film on a side face of the second trench and both the first semiconductor layer and the second semiconductor layer in order to relax concentration of an electric field in the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.