Exchange coupling thin film and magnetoresistive element comprising the same
US6055135A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 24, 1997 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Mar 24, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.