Memory device utilizing giant magnetoresistance effect
US6055179A · kind A · utility
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device using giant magnetoresistance (GMR) effect, and an inexpensive memory device that has low power consumption, excels in memory performance, and is suitable for use in computer peripherals. The memory device utilizes giant magnetoresistance effect and includes a substrate with an insulating surface; a monocrystalline semiconductor layer formed on the insulating surface of the substrate, a switching element formed at least on part of the monocrystalline semiconductor layer, a magnetoresistive film formed on the insulating surface of the substrate, the magnetoresistive film comprising a first magnetic layer and a second magnetic layer which has a higher coercive force than the first magnetic layer and which is stacked on the first magnetic layer with a non-magnetic layer interposed between them, and a word line installed near the magnetoresistive film with an insulating layer interposed between them, and the switching element is connected electrically to either the magnetoresistive film or word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.