Semiconductor laser device with an optical guide layer
US6055253A · kind A · utility
6Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1995 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Mar 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3409
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.