Plasma immersion ion processor for fabricating semiconductor integrated circuits
US6055928A · kind A · utility
15Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Mar 2, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.