Cryogenic annealing of sputtering targets
US6056857A · kind A · utility
47Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1997 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Aug 13, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.