Rare earth doping of porous silicon
US6056868A · kind A · utility
0Cited by
2References
20Claims
0Family size
Inventors
Key dates
| Filing date | May 22, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8264
Abstract
The present invention discloses the doping of rare earth elements into porous silicon, resulting in enhancement of luminescence. The doping is an electro-chemical process using constant voltage bias across the two electrodes in which the anode is porous silicon and the cathode is platinum. The doping process involves a well-defined solution of electrolytes that controls the conductivity of the solution, and set values of constant voltages that selectively allow the desired rare earth elements being doped into porous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.