Method of promoting the decomposition of silicon compounds in a process for depositing silicon upon a metal surface
US6056870A · kind A · utility
0Cited by
6References
14Claims
0Family size
Inventors
Key dates
| Filing date | Aug 25, 1994 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Aug 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S585/95
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
For a given percentage decomposition, the decomposition temperature of an organosilicon compound is reduced by admixing with the organosilicon compound a decomposition promoting organotin compound. The amount of decomposition promoting organotin compound admixed with the organosilicon compound is sufficient to effectively lower the decomposition temperature of the organosilicon required for a given percentage decomposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.