Method of manufacturing semiconductor device
US6057185A · kind A · utility
3Cited by
12References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 30, 1996 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Aug 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0174
Abstract
An N-type impurity is ion-implanted in the exposed surface of a semiconductor substrate, thereby forming N-type diffusion layers. A P-type impurity is ion-implanted in the semiconductor substrate covered with a cover film, thereby forming P-type diffusion layers. A compound film of a semiconductor and a metal is formed on each of the surfaces of the N-type and P-type diffusion layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.