Method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process
US6057202A · kind A · utility
44Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Mar 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process can reduce substrate coupling effect, because (an) air layer(s) is/are formed just under a spiral metal layer which functions as an inductor. In addition, part of the substrate material still remains around the air layer(s), which can be used as a support for the spiral metal layer. Therefore, a problem causing the above-mentioned spiral metal layer to collapse will never occur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.