Integrated circuit capacitor
US6057203A · kind A · utility
3Cited by
9References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 19, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Jun 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor may be formed by implanting after forming a dielectric and a conductive layer over a semiconductor structure. This diminishes the implant damage to the region underneath the conductive layer. Implanted impurities may be driven under the conductive layer such that two opposed impurity profiles overlap. This forms a junction under the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.