Silicon carbide semiconductor device and manufacturing method thereof
US6057558A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Mar 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
In a silicon carbide semiconductor device such as a trench gate type power MOSFET, the film thickness and the impurity concentration of a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set so that on impression of a reverse bias voltage a pn junction between a P-type epitaxial layer and an n.sup.- -type epitaxial layer undergoes avalanche breakdown before the thin film silicon carbide semiconductor layer undergoes punch-through. By this means it is possible to obtain a target high source-drain withstand voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.