II-VI laser diodes with short-period strained-layer superlattice quantum wells
US6057559A · kind A · utility
4Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1995 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Jan 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0125
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser diode for emitting a coherent beam of light in the blue and/or green portions of the spectrum. The laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer. A short-period strained-layer superlattice (SPSLS) CdZnSe quantum well active layer is positioned within the pn junction. The layers of II-VI semiconductor are supported by a substrate. First and second electrodes on opposite sides of the layers of II-VI semiconductor couple electrical energy to the laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.