Light transparent superlattice window layer for light emitting diode
US6057563A · kind A · utility
4Cited by
1References
4Claims
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Key dates
| Filing date | Jun 23, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
Disclosed is a light transparent window layer for light transmitting diodes. The light transparent window layer is formed by growing a plurality of AlGaInP superlattice layers such that the uniformity of current distribution within LED chip can be enhanced, and the size of light-emitting area can be increased. The manufacturing process is also simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.